By A. J. Auberton-Hervé, B. Aspar, J. L. Pelloie (auth.), J. P. Colinge, V. S. Lysenko, A. N. Nazarov (eds.)
In Physical and Technical difficulties of SOI constructions and Devices, experts in silicon-on-insulator know-how from either East and West meet for the 1st time, giving the reader the opportunity to develop into conversant in paintings from the previous Soviet Union, hitherto in simple terms to be had in Russian and rarely to be had to western scientists. Keynote lectures and state of the art shows supply a wide-ranging landscape of the demanding situations posed through SOI fabrics and units, fabric fabrication ideas, characterisation, machine and circuit matters.
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And BomchiI, G. Letters2, 519-523. 7. lIlder noncohecent light transient treat:mt:nt. Phys. Semicond 20, 929-933. 8. Surjocel, 38-40. 9. , Herin<>, R and Bomchil, 0. 62, 1042-1048. 10. , and Troyanova, ON. J. MicroeIectroniGS 23, 61~. II. N. (1988) AES investigation of thin fJlms of nitridized and oxydizt'Xi porous siIioon, Abstr. 2nd 1111. Con/. Technol. 6, 857-862. 12. , and Raileo, VA (1989) EJectrochemical deposition of cobalt on porous silicon, DokJody ofBeIaruYion Academy ofSciences, 33, 528-530.
And Dorofeev, AM. Sol. (a) 104, 193-198. 6. , and BomchiI, G. Letters2, 519-523. 7. lIlder noncohecent light transient treat:mt:nt. Phys. Semicond 20, 929-933. 8. Surjocel, 38-40. 9. , Herin<>, R and Bomchil, 0. 62, 1042-1048. 10. , and Troyanova, ON. J. MicroeIectroniGS 23, 61~. II. N. (1988) AES investigation of thin fJlms of nitridized and oxydizt'Xi porous siIioon, Abstr. 2nd 1111. Con/. Technol. 6, 857-862. 12. , and Raileo, VA (1989) EJectrochemical deposition of cobalt on porous silicon, DokJody ofBeIaruYion Academy ofSciences, 33, 528-530.
ApplPhys. 17. Dorofeev, AM. N. (1994) Analysis of lattice misfit in "DiamondIPorous silicon" hettroepitaxial structure, Proc. 2nd Int. Symp. Diamond F~ (ISD-2), Minsk, 72-73. 18. , and Troyanova, ON. (1993) Hete:roepitaxy of GaAs 00 porous Si: The struture of the interface and defects of GaAs, Abstr. 17th 1111. Defects in Semiconductors, Gtmmden, Austria, 192. 19. N. Lett. 20, 51-55. 20. P. (1994) MPCVD diamond deposition on porous siJicon pretreated with the bias method, Proc. Diamond F~ (ISD-2), 3-5 May 1994, Minsk,IOI-IOl.