By Vadim Issakov
There are non-stop efforts focussed on bettering highway site visitors safeguard all over the world. a variety of motor vehicle security features similar to driving force suggestions structures were invented. Many driving force suggestions positive factors depend on radar-based sensors, yet are costly. awareness of reasonably cheap radar front-end circuits might let their implementation in less costly economic climate autos, significantly contributing to site visitors security. fee aid calls for high-level integration of the microwave front-end circuitry, in particular analog and electronic circuit blocks co-located on a unmarried chip. The booklet offers the layout, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar applied sciences. The applicability of a typical electronic 0.13 μm CMOS know-how for recognition of a 24 GHz narrow-band radar front-end sensor is investigated. The provided circuits are appropriate for car, commercial and patron purposes, as e.g. lane-change assistant, door openers or alarms.
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Additional info for Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies
Example text
A heavily doped conductive polysilicon acts as the gate terminal. Silicide is typically used to form ohmic contacts for source, drain and gate. A thin silicon-dioxide (SiO2 ) layer, also referred to as the gate oxide, insulates the gate from the substrate. Shallow trench isolation (STI), realized using SiO2 , is implemented in order to reduce leakage between transistors and thus allow higher transistor density. As can be seen in Fig. 1, for an NMOS transistor both the well and the substrate are p-doped.
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