By D. J. Fisher
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Extra resources for A Directory of Arrhenius Parameters: Metals
The H diffusivity obeyed Arrhenius-type behavior at 573 to 873K. 9(kcal/mol)/RT] respectively. The diffusivity was not affected by the small particles in the matrix, and depended only upon the grain size. A so-called grain-boundary cross effect, which referred to fast diffusion along grain boundaries and suppressed diffusion due to H trapping at nodes or grain boundary junctions, was confirmed. A linear relationship was found between the logarithm of the pre-exponential factor and the activation energy.
Scully: Acta Materialia, 1998, 46, 6337-49  Al: H Diffusion The techniques of H-introduction by mechanical abrasion, and thermal evolution spectroscopy, were applied to the determination of H diffusivity in high-purity Al and an Al-1000ppm[at]Si dilute alloy. 1(kcal/mol)/RT] The diffusivities were larger than those previously reported. It was suggested that the interstitial mechanism predominated in high-purity Al; even in the low-temperature region. The binding energy of a H atom to a Si atom was estimated to be equal to 16kJ/mol.
Mehrer: Philosophical Magazine A, 2000, 80, 1245-63  Co2Nb: Nb Diffusion Self-diffusion in the Laves phase was studied by using the 95Nb radio-isotope, and sputtering or mechanical sectioning. The Nb diffusivity was significantly lower than that of Co. 0(kJ/mol)/RT] It was proposed that diffusion was mediated by thermal vacancies. Mehrer: Philosophical Magazine A, 2000, 80, 1245-63  Co79Nb14B7: Fe Diffusion Impurity diffusion characteristics were determined for relaxed amorphous alloy samples at 573 to 694K.